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Process for growing metalloid thin films utilizing boron-containing reducing ...
Filed: January 18th, 2001 [Granted]
Assignee: ASM Microchemistry Oy
Patent Number: 6599572
US 6599572 B2 (45) Date of Patent: Jul. 29, 2003 (54) PROCESS FOR GROWING ... 18 , 2000 (FI) 20000099 (51) Int. CI.7 C23C 16/06; C23C 16/32 (52) US CI ...
In situ deposition of a low κ dielectric layer, barrier layer, etch stop ...
Filed: December 29th, 2008 [Granted]
Assignee: Applied Materials Inc
Patent Number: 7670945
6596643 B2 7/2003 Chen et al. 6599572 B2 7/2003 Saanila et al. 6607976 B2 8/2003 Chen et al. 6620723 Bl 9/2003 Byun et al. 6627532 Bl 9/2003 Gaillard et al.
Control of gas flow and delivery to suppress the formation of particles in ...
Filed: October 26th, 2007 [Granted]
Assignee: Applied Materials Inc
Patent Number: 7794544
6596602 B2 7/2003 Iizuka et al. 6951804 B2 10/2005 Seutter et al. 6596643 B2 7/ 2003 Chen et al. 6953742 B2 10/2005 Chen et al. 6599572 B2 7/2003 Saanila et ...
Plasma-enhanced cyclic layer deposition process for barrier layers
Filed: January 5th, 2009 [Granted]
Assignee: Applied Materials Inc
Patent Number: 7732325
6585823 Bl 7/2003 Van Wijck 6592942 Bl 7/2003 Van Wijck 6593484 B2 7/2003 Yasuhara et al. 6596602 B2 7/2003 Iizuka et al. 6599572 B2 7/2003 Saanila et al.
Tantalum carbide nitride materials by vapor deposition processes
Filed: September 25th, 2007 [Granted]
Assignee: Applied Materials Inc
Patent Number: 7678298
6569501 B2 5/2003 Chiang et al. 6585823 Bl 7/2003 Van Wijck et al. 6593484 B2 7/ 2003 Yasuhara et al. 6596602 B2 7/2003 Iizuka et al. 6599572 B2 7/2003 ...
Cyclical deposition of refractory metal silicon nitride
Filed: June 7th, 2006 [Granted]
Assignee: Applied Materials Inc
Patent Number: 7892602
6596602 B2 7/2003 Iizuka et al. 2001/0024387 Al 9/2001 Raaijmakers et al. 6596643 B2 7/2003 Chen et al. 2001/0025979 Al 10/2001 Kim et al. 6599572 B2 7/ 2003 ...
Methods for depositing tungsten layers employing atomic layer deposition ...
Filed: July 24th, 2008 [Granted]
Assignee: Applied Materials Inc
Patent Number: 7745333
6596602 B2 7/2003 Iizuka et al. 7081271 B2 7/2006 Chung et al. 6596643 B2 7/2003 Chen et al. 7094680 B2 8/2006 Seutter et al. 6599572 B2 7/2003 Saanila et ...
CVD TiSiN barrier for copper integration
Filed: July 22nd, 2003 [Granted]
Assignee: Applied Materials Inc
Patent Number: 6958296
2003/0082300 Al 5/2003 Todd et al. 6596643 B2 7/2003 Chen et al. 2003/0082301 Al 5/2003 Chen et al. 6599572 B2 7/2003 Saanila et al. 2003/0082307 Al 5/2003 ...
