... above and an a-Ta portion deposited by high density plasma physical vapor deposition (HDP-PVD). [0056] To further illustrate, the a-Ta portion of the ...

... [0012] One aspect of the invention provides a method for forming a feature on a substrate by chemical vapor depositing a first metal on the substrate to ...

3 constant material. Generally, the polycrystalline layer is doped by ion implantation, thermally annealed, such as with a rapid thermal annealing (RTA) ...

... 17 the resist members 20a, 20b, 20c and 20d are to be removed. HoWever, With respect to this embodiment of the present invention, the resist members 20a ...

3 tively depict a non-limiting exemplary embodiment of stages of fabrication of a titanium nitride barrier layer on a substrate 100 suitable for use in ...

... in the removal of conductive material from a substrate surface and into a surrounding electrolyte solution. [0060] In general, any of the above-defined ...

5 10 l5 20 25 30 35 40 45 50 55 60 65 5 Following plasma nitridation, thermal oxidation is performed on the substrate at step 108 using a thermal annealing ...

US 20070077767A1 (i9) United States (12) Patent Application Publication oo) Pub. No.: US 2007/0077767 Al Jin et al. (43) Pub. Date: Apr. 5, 2007 (54) METHOD ...