Deep as channel patents | Patentfish.com

Deep buried channel junction field effect transistor (DBCJFET)

Filed: May 25th, 2006 [Pending]

Patent Application Number: 11440773

In this manner, the JFET is referred to as a deep buried channel junction field effect transistor (DBCJFET). Locating the channel below the surface of the ...

Pressure induced reagent introduction and electrophoretic separation

Filed: July 27th, 2004 [Pending]

Assignee: Caliper Life Sciences Inc

Patent Application Number: 10900850

Shallow channels are also used for loading samples, eg, from a deep mixing ... The pressure source introduces one or more samples into a deep channel, eg, ...

Jsit-type field effect transistor with deep level channel doping

Filed: November 22nd, 1977 [Granted]

Assignee: Nippon Gakki Seizo Kabushiki Kaisha

Patent Number: 4209795

DEEP LEVEL CHANNEL DOPING It should be understood that the presence of such lattice defect in the channel region does not adversely BACKGROUND OF THE ...

System and method for self-referencing a sensor in a micron-sized deep flow ...

Filed: September 11th, 2007 [Granted]

Assignee: Corning Incorporated

Patent Number: 8021613

A system comprising: a sensor; a micron-sized deep flow channel in which a sample solution and a reference solution flow side-by-side to one another in a ...

Pressure induced reagent introduction and electrophoretic separation

Filed: July 27th, 2004 [Pending]

Assignee: Caliper Life Sciences Inc

Patent Application Number: 10900850

For example, a cross-injector for separations in standard dimension channels (eg , about 70 fim wide by about 20 fim deep) contains more than 400 times the ...

Bulk charge modulated transistor threshold image sensor elements and method ...

Filed: March 23rd, 1989 [Granted]

Assignee: Texas Instruments Incorporated

Patent Number: 4901129

A bulk charge modulated MOSFET for sensing incident light comprising: a semiconductor substrate of a first conductivity type having a deep buried channel ...

Buried n.sup.- channel implant for NMOS transistors

Filed: October 21st, 1985 [Granted]

Assignee: Motorola Inc

Patent Number: 4701775

"Optimization of Sub-micron p-Channel FET Structure," IEEE International Electronic Devices Meeting Papers, Vol. 24.6 1983, pp. 534-537. The use of a deep, ...

WINDOW CHANNEL

Filed: November 10th, 1933 [Granted]

Assignee: The Schlegel Manufacturing Company

Patent Number: RE20911

Under certain con- 5 ditions, it is desirable to provide what may be termed a " deep" channel having more depth than the ordinary conventional window channel ...