Depositing fluorocarbon films patents, pg. 8

Method for fabricating semiconductor device

Filed: June 20th, 2003 [Granted]

Assignee: Matsushita Electric Industrial Co Ltd

Patent Number: 7166538

5 Therefore, in the case where the residue 29 of the titanium nitride film, the fluorocarbon deposit film 30 and the natural oxide film are to be completely ...

Interlayer insulating film, wiring structure and electronic device and ...

Filed: November 8th, 2007 [Granted]

Assignee: National Iniversity Corporation Tohoku University Tokyo Electron Limited

Patent Number: 7923819

Nitrogen is contained in the fluorocarbon film. ... 15A is a cross section SEM photograph of a CF film deposited on Si without supplying ...

Diaphragm having zirconium oxide and a hydrophilic fluorocarbon resin in a ...

Filed: October 20th, 1978 [Granted]

Assignee: PPG Industries Inc

Patent Number: 4170539

Especially preferred is a diaphragm having a porous, hydrophobic fluorocarbon matrix, an intermediate layer or 35 film of the hydrophilic fluorocarbon resin ...

INTERLAYER INSULATING FILM, INTERCONNECTION STRUCTURE, AND METHODS OF ...

Filed: January 10th, 2011 [Pending]

Patent Application Number: 12987914

Specially, it is preferable that the first fluorocarbon film is provided for ... or is formed by forming a film of nickel by PVD (Physical Vapor Deposition) ...

Magnetic recording device having an improved slider

Filed: August 24th, 1998 [Granted]

Assignee: International Business Machines Corporation

Patent Number: 6477011

EXAMPLE I Fluorocarbon films are deposited by plasma enhanced chemical vapor deposition process in a parallel plate 200 mm radius electrode using 13.56 MHZ ...

METHOD FOR DIRECTIONAL DEPOSITION USING A GAS CLUSTER ION BEAM

Filed: September 28th, 2007 [Pending]

Assignee: TEL EPION INC

Patent Application Number: 11864330

[0089] According to an example, a film containing W is deposited using the ... fluorocarbon-containing films, the fluorocarbon-containing specie can include ...

Semiconductor junction formation process including low temperature plasma ...

Filed: May 17th, 2005 [Granted]

Assignee: Applied Materials Inc

Patent Number: 7109098

Other fluorocarbon gases include C2F4, C2F6, C3F8, C4F8 and C5F8. The process may be used to deposit fluoro-hydrocar- bon films.

Plasma polymerized electron beam resist

Filed: April 25th, 2002 [Pending]

Patent Application Number: 10131030

Another study used a combination of CF4 and CH4 to deposit a fluorocarbon film for coating (see A. Vanhulsel, E. Dekempeneer, and J. Smeets, ...