xSeut layer, a GaAs layer doped with Se is grown on the GaAs substrate in a manner that the content of Se 60 is increased toward the surface of the GaAs ...

In some embodiments, cap layer 38 may be grown at low temperature similar to that used to grow nucleation layer 22. In the structure of low temperature ...

[0020] The present invention describes a technique for the growth of group III - nitride films grown on miscut substrates. For example, blue emission has ...

A GaN-based semiconductor layer is grown on the sapphire substrate. [0005] Herein, the lattice constant (a axis) of GaN crystal is 3.19 A, while the lattice ...

4a and 4b, a first optical confinement layer 23 for the EA optical modulator is grown on the buffer layer 3d. In the LD area lb where the insulating- film ...

The method comprises (a) a step, by utilizing metal organic chemical vapor deposition, of growing a buffer layer composed of a first gallium nitride ...

Dielectric antifuse layer 202 (preferably silicon oxide, silicon nitride, or silicon oxynitride) is grown on cobalt silicide layer 200 (or any of the other ...

A GaN-based semiconductor layer is grown on the sapphire substrate. [0005] Herein, the lattice constant (a axis) of GaN crystal is 3.19 A, while the lattice ...