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Method of forming STI oxide regions and alignment marks in a semiconductor ...
Filed: February 8th, 2001 [Granted]
Patent Number: 6417072
Shallow isolation trenches will be subsequently filled with the STI oxide to form STI oxide regions. At this stage of the fabrication process, the structure ...
Simplified method to reduce or eliminate STI oxide divots
Filed: January 25th, 2001 [Granted]
Patent Number: 6432797
1 SIMPLIFIED METHOD TO REDUCE OR ELIMINATE STI OXIDE DIVOTS BACKGROUND OF THE INVENTION (1) Field of the Invention 5 The present invention relates to the ...
Method to etch poly Si gate stacks with raised STI structure
Filed: August 11th, 2003 [Granted]
Assignee: Infineon Technologies AG
Patent Number: 7153781
4 DESCRIPTION OF THE PREFERRED EMBODIMENTS In raised STI structures, the thickness of the poly Si gates at the AA and STI oxide is different, thereby making ...
Deep STI trench and SOI undercut enabling STI oxide stressor
Filed: March 7th, 2007 [Granted]
Assignee: Freescale Semiconductor Inc
Patent Number: 7678665
DEEP STI TRENCH AND SOI UNDERCUT ENABLING STI OXIDE STRESSOR FIELD OF THE DISCLOSURE The present disclosure relates generally ...
Structure and method to preserve STI during etching
Filed: May 24th, 2001 [Granted]
Patent Number: 6645867
After the STI is gone, the Buried Oxide (BOX) layer begins to etch. ... Finally, the STI oxide is deposited and chemical mechanical polishing (CMP) used to ...
Method to improve STI nano gap fill and moat nitride pull back
Filed: February 28th, 2003 [Granted]
Assignee: Texas Instruments Incorporated
Patent Number: 6828213
8 is an STI trench post liner oxidation; FIG. 9 is a moat corner with STI oxide recess; FIG. 10 is an STI trench post side wall nitride liner formation; ...
Method of manufacturing semiconductor device
Filed: June 25th, 2004 [Granted]
Assignee: Oki Electric Industry Co Ltd
Patent Number: 7071076
5 region or the STI oxide film is formed. In an example in FIG. 2(A), the surface 106a of the STI oxide film 106 is polished by CMP to a height ...
Strained-silicon channel CMOS with sacrificial shallow trench isolation ...
Filed: January 17th, 2003 [Pending]
Assignee: Sharp Laboratories of America Inc
Patent Application Number: 10345728
A STI liner oxidation process is typically carried out at 800-1000 degrees ... This oxidation process cures the damaged Si, rounding the STI top and bottom ...
