Pattern forming method using phase shift mask
Filed: December 16th, 1996 [Granted]
Patent Number: 5958656
14 is a first SEM (Scanning Electron Microscope) photograph showing a small hole pattern formed by the pattern forming method using a phase shift mask ...
Phase shift masking for intersecting lines
Filed: September 26th, 2000 [Granted]
Patent Number: 6524752
09/669359, entitled Phase Shift Masking for Complex Patterns, invented by Christophe 15 ... such as integrated circuits, using photolithographic masks.
Method of optical lithography using phase shift masking
Filed: July 18th, 1994 [Granted]
Patent Number: 5573890
10 15 20 25 30 35 40 45 50 55 60 65 METHOD OF OPTICAL LITHOGRAPHY USING PHASE SHIFT MASKING FIELD OF THE INVENTION The invention relates to a field of ...
Phase shift masking for "double-T" intersecting lines
Filed: August 20th, 2002 [Granted]
Patent Number: 6610449
5, 2000; entitled Phase Shift Masking for Complex Layouts, invented by Christophe Pierrat, ... such as integrated circuits, using photolithographic masks.
Phase shift masking for complex patterns
Filed: September 26th, 2000 [Granted]
Patent Number: 6503666
9 is a plot of the intensity profile of an exposure made using the masks of FIGS . 7 and 8. FIG. 10 is a binary mask, and FIG. 11 is a phase shift mask for ...
Phase shift mask layout process for patterns including intersecting line ...
Filed: September 5th, 2002 [Granted]
Patent Number: 6811935
5, 2000; entitled Phase Shift Masking for Complex Layouts, invented by Christophe Pierrat, ... such as integrated circuits, using photolithographic masks.
Phase shift mask sub-resolution assist features
Filed: September 26th, 2000 [Granted]
Patent Number: 6541165
In this case, phase shift regions are laid out adjacent the line segments on either side of the ... lines) to be implemented using phase shift masking.
Printing irregularly-spaced contact holes using phase shift masks
Filed: October 25th, 2004 [Pending]
Patent Application Number: 10973001
Assume the interior regions of all polygons on a first (two-phase phase shift) mask is Jt1 and all interior regions of all polygons on a second (two-phase ...